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Band-gap profiling for improving the efficiency of amorphous silicon alloy solar cells (1989)

Guha, S. ; Yang, J. ; Pawlikiewicz, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2330-2332

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have developed an amorphous silicon alloy based solar cell with a novel structure in which the optical gap of the intrinsic layer changes in a substantial portion of the bulk. Computer simulation studies show that for a given short circuit current, it is possible with this structure to obtain higher open circuit voltage and fill factor than in a conventional cell design. Experimental cell structures have been made and confirm the theoretical prediction. The new cell design shows a considerable improvement in efficiency. Incorporation of this structure in the bottom cell of a triple device has resulted in the achievement of 13.7% efficiency under global AM1.5 illumination.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101118

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