ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The MBE growth and selected properties of InAs/AlSb n-N isotype heterojunctions on n+-GaAs substrates are described. Because of a large conduction-band offset (1.35 eV), these junctions behave like Schottky barriers, with excellent rectification characteristics, despite the presence of a very high density (〉107 cm−2) of threading dislocations resulting from the large lattice mismatch (7%) between AlSb and the GaAs substrate. The forward I-V characteristics, corrected for series resistance, exhibit a large nonideality factor of about 1.8, suggesting that the main current flow is along a defect path, presumably related to the misfit dislocations. Reverse C-V characteristics exhibit a perfectly linear 1/C2 vs V plot, from which a conduction-band offset of 1.35±0.05 eV is deduced. This value is in excellent agreement with the value predicted from the known band offsets in InAs/GaSb and GaSb/AlSb.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101233
