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Spatially distributed gains in semiconductor lasers (1989)

Le Grand, Y. ; Le Floch, A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 1607-1609

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A careful analysis of the gain using the amplified spontaneous emission in semiconductor lasers concludes that there is a spatial distribution of the gain. A twofold distribution is observed in the planes parallel and perpendicular to the junction with different decreasing variations from the laser axis to the edge of the radiation lobe. Collecting the entire emitted light beam gives usually too low gain values. Gain measurements restricted to the region around the laser beam axis lead to an improvement of the gain value determination being within 96% of the actual value determined by the laser threshold.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101321

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