Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1124-1126
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Clean surfaces of molecular beam epitaxially grown GaAs were exposed to diethylgalliumchloride (DEGaCl) and the resultant change was observed by in situ x-ray photoelectron spectroscopy. At a substrate temperature of 300 °C, a self-limiting reaction between DEGaCl and the surface resulted in one monolayer of Ga deposition which is believed to lead to atomic layer epitaxy of GaAs using DEGaCl. No appreciable increase of Cl or C was observed after exposure. Discussion on the mechanism of the self-limiting reaction is also presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100776
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