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Ultrafast carrier dynamics in modified semiconductor-doped glass (1989)

Zheng, J. P. ; Kwok, H. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 1-3

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The recombination lifetime in CdSx Se1−x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100824

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