Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 63-65
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
At North Carolina State University, we have recently employed photoassisted molecular beam epitaxy to successfully prepare p-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this letter, we report details of the growth experiments and describe the structural, optical, and electrical properties that this new infrared quantum alloy of HgCdTe possesses.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100836
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