Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 675-677
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Observation of free excitons is reported in room-temperature photoluminescence of nominally undoped GaAs/AlGaAs single quantum wells grown by molecular beam epitaxy. A comparative study with parallel-conduction photocurrent spectroscopy shows that a sharp luminescence peak with a linewidth of 14 meV observed for the 6.1-nm-wide well coincides within 2 meV with the n=1 heavy-hole free-exciton resonance line at excess carrier densities less than 1017 cm−3. Excitonic decay channels dominate the luminescence spectrum even at room temperature as a result of quantum confinement effects, although photogenerated carriers are also provided for photocurrents by exciton dissociations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99847
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