Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2555-2557
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the films is accommodated by the formation of dislocation networks in the substrate wafers. A cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane's heterogeneous reaction rate by a factor of 25. A model is proposed where Ge acts as a desorption center for mobile hydrogen adatoms on the Si[100] surface, accelerating heterogeneous silane pyrolysis by the enhanced availability of chemisorption sites.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100206
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