Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2302-2304
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Impurity-induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si+ ion implantation to concentrations greater than 2×1019 atoms cm−3 enhances the intermixing of Ga and Al in these heterostructures at an annealing temperature of 1075 K. However, the relatively high temperature which is required to activate the interdiffusion of Ga and Al in the region of high Si concentration is sufficient to induce In diffusion in regions of lower Si concentration. Zinc diffusion is found to completely intermix the Ga and Al in the heterolayers at temperatures as low as 825 K, which is below the temperature at which significant In diffusion occurs in undoped regions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100260
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