ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion of SiIII-SiV neutral pairs versus the diffusion of SiIII-VIII complexes in III-V crystals is compared in the light of experimental data showing the effect of Si diffusion on self-diffusion of column III and column V lattice atoms. Secondary-ion mass spectroscopy is used to compare the enhanced diffusion of column III or column V atoms in several different Si-diffused heterostructures closely lattice matched to GaAs. Enhancement of the lattice-atom self-diffusion, via impurity diffusion, is found to occur predominantly on the column III lattice. Supporting the SiIII-VIII diffusion model, these data indicate that the main native defects accompanying the Si diffusion are column III vacancies, which diffuse directly on the column III sublattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100284