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Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films (1988)

Matsui, S. ; Matsutera, H. ; Yoshitake, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2096-2098

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7−x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100499

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