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Trends of deep level electron traps in AlxGa1−xAs grown by molecular beam epitaxy (1988)

Puechner, R. A. ; Johnson, D. A. ; Maracas, G. N.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 1952-1954

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Deep level transient spectroscopy is used to study one of the deep electron traps commonly seen in AlxGa1−xAs grown by molecular beam epitaxy (MBE). This trap, having the largest capture cross section of the commonly observed levels in MBE material, is measured in samples with Al composition varying from 8 to 40%. It is shown that the activation energy remains fixed with respect to the valence band, over the composition range studied. The trap is tentatively identified as a group III related vacancy. The effects of varying MBE growth parameters are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100333

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