Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 546-548
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An atomistic growth model is used to explain sidewall facet and defect formation during selective epitaxial growth of (001) silicon. Films grown through oxide windows with {110} sidewall orientations exhibit facets (typically {311} planes) adjacent to the sidewall. This region also has a high density of twins. Films grown in windows oriented to have {100} sidewalls have no sidewall facets and a very low defect density. The facet morphology and twin formation at {110} sidewalls are both explained by the influence of the oxide on nucleation of {111} planes. Similar considerations indicate that films grown along {100} sidewalls are less susceptible to facet and defect formation, as observed. Experimental data on film morphology and defect structure are used to support the model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99412
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