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Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation (1988)

Davey, S. T. ; Davis, J. R. ; Reeson, K. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 465-467

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99445

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