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Hole photoionization cross sections of EL2 in GaAs (1988)

Silverberg, P. ; Omling, P. ; Samuelson, L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1689-1691

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The spectral dependence of the hole photoionization cross section σ0p of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section σ0n, accurate values of the photon energies and the cross sections at which σ0n=σ0p could be obtained. These data are of importance for rapid and accurate determination of concentration and charge states of EL2 in GaAs, e.g., in wafer mapping applications.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99020

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