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Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures (1988)

Brown, A. S. ; Henige, J. A. ; Delaney, M. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1142-1143

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells (〉10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K. K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99185

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