Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 685-687
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It is well known that when Si films are radiatively heated there exists a range of incident intensities for which liquid and solid regions coexist at near uniform temperature. Based on in situ microscopic observation of solidification interface morphologies, we argue that this phenomenon is responsible, at least in part, for the morphology of the liquid-solid interface in zone-melting recrystallization. We demonstrate this effect through stationary interface experiments. It is observed that even a stationary interface exposed to a gradient in radiation intensity develops interface morphologies similar to those of moving interfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98334
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