Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2242-2244
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It is demonstrated that well-defined buried layers of β-SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (〉3×1017 C+ cm−2) at 200 keV into a (100) single-crystal silicon which is maintained at a temperature of approximately 550 °C. During the subsequent anneal at 1405 °C for 90 min redistribution of the implanted species occurs, enabling the formation of a buried layer of β-SiC overlain by high-quality single-crystal silicon (χmin=4.1%).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98953
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