Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1934-1936
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We study experimentally and theoretically the influence of interface roughness on the mobility of two-dimensional electrons in modulation-doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw〈60 A(ring), where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 A(ring). From detailed comparison between theory and experiment, it is determined that the "GaAs-on-AlAs'' interface grown by molecular beam epitaxy has a roughness with the height of 3–5 A(ring) and a lateral size of 50–70 A(ring).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98305
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