Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1328-1330
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Pattern transfer etching of heavily phosphorus-doped polycrystalline silicon has been developed using a KrF excimer laser through a 1:1 reflective optics and a new contrast enhancement scheme employing methylmethacrylate. With laser power at more than 0.5 mJ/cm2 and Cl2 gas as etchant, etching of n+ poly-Si proceeded in the illuminated (bright) region, while the dark region was protected from etching by a polymer film formed from methylmethacrylate. As a result, a 0.9-μm resolution pattern has been achieved.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.98668
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