Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1004-1006
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report accurate determination of the critical layer thickness (CLT) for single strained-layer epitaxy in the InGaAs/GaAs system. Our samples were molecular beam epitaxially grown, selectively doped, single quantum well structures comprising a strained In0.2Ga0.8As layer imbedded in GaAs. We determined the CLT by two sensitive techniques: Hall-effect measurements at 77 K and photoluminescence microscopy. Both techniques indicate a CLT of about 20 nm. This value is close to that determined previously (∼15 nm) for comparable strained-layer superlattices, but considerably less than the value of ∼45 nm suggested by recent x-ray rocking-curve measurements. We show by a simple calculation that photoluminescence microscopy is more than two orders of magnitude more sensitive to dislocations than x-ray diffraction. Our results re-emphasize the necessity of using high-sensitivity techniques for accurate determination of critical layer thicknesses.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98984
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