Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 910-912
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high-resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 A(ring) with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half-widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98798
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