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Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures (2002)

Godo, K. ; Makino, H. ; Cho, M. W. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 5811-5814

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence spectra show dominant sharp excitonic emission whose peak position systematically shifts to the higher energy side with decreasing the well thickness. Photoluminescence excitation spectra show optical transitions between excited quantum levels in addition to the ground levels. The standard analysis based on the effective-mass approximation gives the valence band offset of ΔEυ=(0.4±0.1)ΔEg. This is consistent with calculated values based on Harrison's linear combination of atomic orbitals theory. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1468279

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