ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated a 1.3 μm InGaAlAs/InP (001) vertical-cavity surface-emitting laser (VCSEL) structure using surface photovoltage spectroscopy (SPS) and normal-incidence reflectivity. The SPS measurements were performed as a function of angle of incidence relative to the normal (0°–55°) and temperature (300 K〈T〈420 K). The SPS spectra exhibit both the fundamental conduction to heavy-hole excitonic transition and cavity mode plus a rich interference pattern related to the mirror stack. The advantages of SPS in relation to other methods to study VCSELs, such as photoreflectance and photocurrent spectroscopy, are discussed. This experiment demonstrates the considerable potential of SPS for the characterization of these device structures. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1467396
