ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using a hydrodynamic model of semiconductor plasmas, we report an analytical investigation of hot-carrier induced nonlinearity and its impact on the optical parameters (refractive index and absorption coefficient) of a magnetized, space-charge neutral group IV semiconductor. The carrier heating by the pump is assumed to induce nonlinearity in the medium through momentum transfer collision frequency ν of the carriers and space-charge neutrality of the medium. For the linear optical parameters (nl, al), both electrons and holes are found to contribute resonantly at high frequency of the pump (ω0(approximate)ωce). For the nonlinear optical parameters (n2, a2), the holes contribute significantly in the low pump frequency regime (ω0(approximate)ωch,) whereas in the high pump frequency regime (ω0(approximate)ωce), both kinds of carriers contribute resonantly in which a much larger contribution comes from the electrons. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1456245
