Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 4747-4750
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
SiO2 thin films prepared by rapid thermal oxidation (RTO) and in situ steam generation (ISSG) were characterized by infrared spectroscopy (IR) with gradient etching preparation and grazing incidence x-ray reflectometry. The IR spectra of the RTO films show a lower wave number shift as the film thickness decreases. On the other hand, the IR spectra of the ISSG film produced by the addition of 5% hydrogen did not show such large peak shifts. This means that the 5% hydrogen ISSG film has a very low concentration of lower wave number components that exhibit Si–O stretching mode. These are responsible for defect structures including dangling bonds and/or oxygen deficient defects near the SiO2/Si interface. © 2002 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1459097
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