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Direct imaging of a biased p-n junction with conductance mapping (2002)

Park, Jeong Young ; Williams, E. D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 3745-3749

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report characterization of Si p-n junction arrays using simultaneous conductance imaging and constant current mode (topographical) scanning tunneling microscopy imaging over a range of reverse bias conditions. Both constant current and conductance imaging of the electrically different regions (n, p, and inverted region) show a pronounced dependence on applied p-n junction bias. Tunneling spectra measured across the p-n junction show that the conductance contrast agrees well with the expected variation due to tip-induced band bending. Taken in combination with the topographical image, conductance images can be used to characterize spatial variations of carrier densities across the device. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1453507

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