Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 2842-2846
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The mechanisms of the formation of titanium silicide from the reaction of a single thin film of Ti on the silicon substrate with different degrees of substrate amorphization were studied using differential scanning calorimetry. With increased amorphization, an exothermic reaction prior to C49-TiSi2 formation was observed. X-ray diffraction discovered an unidentified phase together with Ti5Si3 and Ti5Si4 that disappeared with subsequent formation of C49-TiSi2 at temperatures above 650 °C. The difference in Gibbs free energy was considered in explaining the formation of Ti5Si3 and Ti5Si4. Based on the Scherrer equation, the resultant C49-TiSi2 grains with higher degrees of silicon substrate amorphization were smaller than those without silicon substrate amorphization. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1432768
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