Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 2929-2935
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have analyzed the cathodoluminescence spectra of Sm3+ ions implanted and annealed in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and 1050 nm, representing transitions from the 4G5/2 to the 6HJ and 6FJ manifolds of Sm3+(4f5). Emission lifetimes were determined at various temperatures between 7 and 320 K for transitions from 4G5/2 to 6H5/2, 6H7/2, and 6H9/2. Lattice-sum calculations were carried out to determine the crystal-field splitting of the multiplet manifolds. With individual Stark levels and corresponding wave functions identified, the matrix elements for both electric–dipole and magnetic–dipole transitions were calculated between levels. Radiative lifetimes were calculated and compared with experimental lifetimes. High quantum efficiencies are reported. The calculated branching ratios for transitions from 4G5/2 to 6HJ and 6FJ manifolds indicate that transitions to 6H5/2, 6H7/2, and 6H9/2 account for 80% of the total observed emission. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1436297
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