Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 2725-2729
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparison of simulated and experimental images indicates nonuniform composition distribution within the coherent islands when the islands were grown at high temperatures (700 °C), but uniform composition for growth at lower temperatures (600 °C). © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1394900
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