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Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations (2001)

Nordlund, K. ; Peltola, J. ; Nord, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 1710-1717

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1384856

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