Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 6172-6176
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K edge, implying that core–hole excitation of Ga and As are efficient primary steps for the excitation of DX centers. A high quantum yield ((very-much-greater-than)1) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1410894
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