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Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration (2001)

Tilke, A. ; Blick, R. H. ; Lorenz, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 8159-8162

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. In our devices, silicon nanostructures are embedded into a metal–oxide–silicon configuration. The single-electron effects can be tuned both by an in-plane sidegate, as well as by a metallic topgate, a technology which is compatible with large-scale integration of single-electron devices with dimensions down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1368399

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