ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Finite-size effects in Bi lines of cross section 3 μm×w, where w=8–120 μm, have been studied. The lines were made by optical lithography followed by electrodeposition. At T=5 K, the magnetoresistance (MR) decreases monotonically with decreasing line width of the Bi films, from 44 000% at w=120 μm to 4000% at w=8 μm in a field of 50 kOe. The decrease of the MR with decreasing linewidth is due to a decrease of the size-limited effective-mean-free path. At low temperatures, both the resistivity and the magnetoresistivity show a strong dependence on w, whereas at room temperature, they are independent of w. The MR at room temperature remains at about 230% for linewidths w=8–120 μm at 50 kOe. This demonstrates that microstructured Bi lines can be made for field-sensing applications without compromising their MR characteristics. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1357115
