ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transient enhanced diffusion of indium implanted in silicon is studied in the presence of the end-of-range (EOR) damage layer. To investigate the effect of EOR defects on the indium diffusion, the samples that were implanted with indium at a high dose (1×1013–5×1014/cm2) sufficient to produce the amorphous layer were prepared. Transmission electron microscopy measurements and Rutherford backscattering spectrometry reveal the amorphization threshold of indium implantation is around 5×1013/cm2 for 200 keV, 115In+ implanted with 100 μA/cm2 beam current density at room temperature. These results are consistent with Monte Carlo simulation of implantation. Monte Carlo simulations indicate the deviation from the plus one model due to the mass effect of indium. After amorphization, following both RTA at 1000 °C and furnace anneal at low temperature (650 and 850 °C) in nitrogen ambient showed the formation of extrinsic EOR dislocation loops below the original amorphous/crystalline interface. During this process, strong segregation of indium toward the EOR dislocation loops is clearly observed. The profile shift of indium at a concentration of 1×1017 atoms/cm3 is not proportional to the implanted dose. Since most interstitials condense into EOR dislocation loops, diffusivity enhancement of indium is not proportional to the implant dose above amorphization threshold. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1314304
