ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a systematic investigation of the oxidation properties of Si dots fabricated on a silicon-on-insulator (SOI) wafer. Dots with diameters varying from 9 to 81 nm were structured on a SOI wafer. These dots were oxidized in a dry oxygen atmosphere at 700, 850, and 1000 °C. The resulting structures were investigated using a side view transmission electron microscopy (TEM) technique in combination with energy filtered TEM. The dimensions of the residual Si and the grown SiO2 were then extracted from the micrographs and analyzed. The oxidation appears to be retarded as compared to the well-known planar oxidation. At 700 and 850 °C a self-limiting effect is observed as well as a clear pattern dependent oxidation at 850 and 1000 °C. We attribute these effects to stress buildup in the oxide. The critical stress, causing the self-limiting effect, is calculated using a model that considers the decrease of the reaction rate with increasing stress perpendicular to the Si surface. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373105
