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The Hall effect of Fe–Al–O thin film (2000)

Xu, Q. Y. ; Ni, G. ; Sang, H. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 6998-7000

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A series of Fe45.51(Al2O3)54.49 (volume fraction) nanogranular films were prepared using the ion-beam sputtering technique. A saturated Hall resistivity of about 12.5 μΩ cm was observed at room temperature. With different annealing temperature TA up to 300 °C, the saturated Hall resistivity of the sample decreases only a little, which shows good thermal stability. The transmission electron microscopy image shows that very small Fe particles (smaller than 1 nm) embedded in the Al2O3 matrix, and connected into the network, with the ρ–T curve indicates that this Hall effect may originate from the percolation phenomenon. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.372910

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