Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 4821-4824
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A dc glow discharge source with controlled plasma potential was developed for application in plasma immersion ion implantation processing of materials surfaces. This type of ion implantation system allows cost effective surface modification of workpieces with complex shapes. The effects of the nitrogen plasma etching during the plasma immersion ion implantation process was studied using Si wafers as monitors, as we varied the externally controlled plasma potential between 0 and 350 V. When the plasma potential is controlled below 70 V, the ion implantation is dominant, otherwise the etching overtakes. The nitrogen implanted silicon wafers were analyzed by high resolution x-ray diffraction and Auger electron spectroscopy which revealed successful implantation of ions with accumulated nitrogen dose of 1.5×1017 cm−2, for the low potential case. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.371448
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