Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 4576-4579
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 μm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.96Sb by using a two wavelength injection scheme. The superlattice gain layer device exhibited multiplication factors in excess of 300, and surface limited dark current at a level comparable to InGaAs/InAlAs devices of similar design. The superlattice gain layer was found to be more promising than its bulk counterpart due to its inherent lower dark current. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371405
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