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Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states (1999)

Vertikov, A. ; Ozden, I. ; Nurmikko, A. V.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 4697-4699

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measurements. Nominally similar samples display a wide range of behavior in terms of the impact of localized states under moderate (n∼5×1017 cm−3) electron-hole (e-h) injection. By contrast, in the high density regime where present laser diodes operate (n∼1019 cm−3), radiative recombination is dominated by electronic action within the extended states.© 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371423

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