Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 7156-7159
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O–Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O–Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g). © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371806
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