Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 452-458
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Degenerately doped (〉1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*〈0.2) and the demonstrated ability to incorporate n-type dopants into the high 1019 cm−3 range, both the Moss–Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×1019 cm−3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370751
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