Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 5372-5374
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the magnetic, electric, and structural properties of Mn5Ge3/Ge nanostructured films produced by solid-state reaction of Mn/Ge multilayered films. The films composed of strongly uniaxially oriented Mn5Ge3 and randomly oriented Ge were successfully produced. The average grain size of Mn5Ge3 considerably changed according to the discharging power (E) of the ion source: 15 nm for E=25 W and 50 nm for E=50 W. The temperature dependence of the conductivity for the E=25 sample showed semiconductor-type behavior over all the temperature region. Whereas the E=50 sample, the conduction type changed from a metallic type (low temperature) to a semiconductor type (high temperature) with the transition temperature TTR=360 K. We also observed the anomalous magnetic behavior of Mn5Ge3. We discuss these behaviors in conjunction with the microstructure of the annealed films. The possibility of the carrier–spin exchange interactions has also been studied. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369981
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