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Electron transport across a Gaussian superlattice (1999)

Gómez, I. ; Domínguez-Adame, F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 3916-3918

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j–V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.369764

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