Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 3630-3635
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) has been achieved by depositing a 2-nm-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si (a-Si) layer at room temperature followed by annealing at 700 °C in ultrahigh vacuum. The thickness of the a-Si was selected to be such that the consumption of Si atoms from the substrate is minimized by taking into account the formation of an amorphous interlayer at the Dy/Si(111) interface. Based on our experimental findings, a new mechanism for the formation of pinhole is proposed. The Stranski–Krastanov growth behavior of epitaxial DySi2−x on Si(111) by solid phase epitaxy leads to the apparently random formation of a high density of recessed regions at the initial stage of silicidation. Polycrystalline DySi2−x was found to be present at the areas inside and epitaxial DySi2−x outside the recessed regions. Large numbers of Si atoms from the substrate can therefore diffuse through the recessed regions. As a result, the depth and size of the recessed regions increase with annealing time. Finally, the DySi2−x thin layer inside the recessed regions with higher interface energy is thermally unstable and breaks apart to form pinholes. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368538
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