ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Point defects and structure damages in Si-implanted thermal SiO2 films were examined by photoluminescence (PL) spectra, electron spin resonance spectra, and infrared absorption spectra. Under ∼5 eV excitation, the as-implanted film had two PL bands peaked at 4.3 and 2.4 eV, respectively. After thermal annealing, the peak energy of the low-energy band shifted from 2.4 to 2.7 eV with the increase of the annealing temperature to 1100 °C, and its intensity and width, and the relative ratio between the intensities of the two PL bands changed also. The change of the ratio, and the width and peak position of the low-energy band via annealing temperature was consistent with the recovery of the implantation-induced structure damage such as densification and distortion of silicon tetrahedra. We propose that the two PL bands are due to neutral oxygen vacancies (NOVs), and the PL characteristics of the NOV defects are related to the structure damage of the SiO2 network. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366578
