Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 733-741
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this paper we analyze low-temperature admittance (capacitance and conductance) measurement as an effective tool for the characterization of amorphous silicon doped layers embedded in thin film structures. Temperature and frequency ranges of 20–250 K and 1–100 kHz, respectively, were used. Measurements were performed on p-i silver and p-i-n structures. Devices with different thicknesses, carbon, and boron content of the p-doped layer were examined. The evolution of the conductance of p-i-n solar cells under illumination was also investigated. Results show excellent sensitivity of the measurement to the states of the doped layer. This sensitivity is explained by using a finite difference simulation program, which proves that at low temperature the trapping process is spatially limited to the doped layers. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365607
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
