Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 5868-5870
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Randomly scattered depth profiles of refractive index are experimentally observed on thin silicon dioxide films on silicon substrates by means of conventional ellipsometry and gradually chemical etching. Computer simulations with an abrupt model and random uncertainties in ellipsometric angles Ψ and Δ show very similar behavior as experiments, and the distribution of the measured profile in the near interface region is in good agreement with 0.02° standard deviation in Ψ. Simulations also indicate that even very small errors in Ψ, as small as 0.001°, can result in divergent depth profile of the refractive index in the near interface region. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366404
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