Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 2720-2724
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the investigation of a low resistance Pd/Zn/Pd contact to p-InGaAsP (λ=1.14 μm). The contact had a minimum contact resistivity of ∼3×10−7 Ω cm2 to the substrate doped to 2×1018 cm−3. The samples showed rather uniform surface and interfacial morphologies. X-ray studies showed the formation of a PdZn phase for samples annealed below 400 °C and this phase started to decompose at temperatures higher than 400 °C. Pd-III compounds (Pd2Ga5 and PdIn3) also started to form for annealing temperatures higher than 400 °C. The ohmic behavior can be understood in terms of the decomposition of the PdZn phase and the formation of Pd-III compounds for samples annealed at 400 °C or higher. The thermal stability of this contact at 400 °C was found to be stable, which is important for device applications. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363974
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