Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 7612-7618
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Atomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of Si–H bonds, giving rise to infrared (IR) absorption at ∼1990 cm−1 and causing partial activation of implanted dopants. Passivation of aSi does not affect the rate at which the material subsequently undergoes solid phase epitaxy. Exposure giving rise to [H]〉6 at. % causes the appearance of an additional IR absorption band at ∼2080 cm−1 and coloration of the layer. Despite annealing, the Si–H defects, normal solid phase epitaxy does not occur during subsequent heat treatment. The structural modification by H-plasma exposure coincides with etching of the layer. The observations can be understood in terms of void formation in aSi resulting from the clustering of Si–H. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365337
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